Title :
Resonant second harmonic generation spectroscopy of short-period Si/SiO/sub 2/ multiple quantum wells
Author :
Mishina, E.D. ; Elyutin, P.V. ; Malinnikova, E.V. ; Rubtsov, A.N. ; Aktsipetrov, O.A. ; De Jong, W. ; Rasing, T.
Author_Institution :
Dept. of Phys., Moscow State Univ., Russia
Abstract :
We report a spectroscopic SHG study of short-period Si/SiO/sub 2/ MQWs. Strong thickness-dependent resonances were observed that can be interpreted as intersubband transition. A new potential well model is suggested with electrostatic self-images being taken into account. MQW structures were made by RF magnetron sputtering on a Si(100) substrate and consisted of 40 double layers of Si/SiO/sub 2/. For the spectroscopic SHG experiments a Ti:sapphire laser between 710 and 850 nm with a pulse duration of about 100 fs and an average input power of 0.1 W was used.
Keywords :
elemental semiconductors; high-speed optical techniques; optical harmonic generation; semiconductor quantum wells; silicon; silicon compounds; sputtered coatings; 0.1 W; 100 fs; 710 to 850 nm; MQW structures; RF magnetron sputtering; Si; Si(100) substrate; Si-SiO/sub 2/; double layers; electrostatic self-images; intersubband transition; potential well model; resonant second harmonic generation spectroscopy; short-period Si/SiO/sub 2/ multiple quantum wells; thickness-dependent resonances; Electrostatics; Frequency conversion; Laser modes; Laser transitions; Magnetic resonance; Potential well; Quantum well devices; Radio frequency; Spectroscopy; Sputtering;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 1996. QELS '96., Summaries of Papers Presented at the
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
1-55752-444-0
