Large blue shift due to band filling at interface islands in coupled quantum wells

Author

Cui, A.G. ; Gorbounova, O. ; Ding, Yujie J. ; Veliadis, J.V.D. ; Lee, S.J. ; Khurgin, Jacob B. ; Wang, K.L.

Author_Institution

Dept. of Phys. & Astron., Bowling Green State Univ., OH, USA

fYear

1996

fDate

7-7 June 1996

Firstpage

19

Lastpage

20

Abstract

Recently we have observed band filling of the exciton states at interface islands in multiple QWs. This occurs at the spatially localized islands because of the spatial confinement of the excitons along the interface. Here we report our experimental observation of enhanced band-filling effect at interface islands in a strongly coupled two-QW sample based on continuous-wave photoluminescence excitation (PLE) measurements. The sample was grown by molecular beam epitaxy on a semi-insulating AlAs substrate. Each unit of 20 periods is composed of two GaAs QWs separated by AlGaAs barrier.

Keywords

III-V semiconductors; excitons; gallium arsenide; molecular beam epitaxial growth; optical harmonic generation; photoluminescence; semiconductor growth; semiconductor quantum wells; spectral line shift; AlAs; AlGaAs; AlGaAs barrier; GaAs; GaAs QWs; band filling; continuous-wave photoluminescence excitation; coupled quantum wells; enhanced band-filling effect; exciton states; excitons; interface islands; large blue shift; molecular beam epitaxy; multiple QWs; nonlinear optics; semi-insulating AlAs substrate; spatial confinement; spatially localized islands; strongly coupled two-QW sample; Absorption; Astronomy; Excitons; Filling; Laser theory; Optical saturation; Physics; Quantum well lasers; Solids; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Quantum Electronics and Laser Science Conference, 1996. QELS '96., Summaries of Papers Presented at the

Conference_Location

Anaheim, CA, USA

Print_ISBN

1-55752-444-0

Type

conf

Filename

865514