Title :
Role of Auger recombination in the photodarkening process of semiconductor-doped glasses
Author :
Vanhaudenarde-Peoc´h, A. ; Moussu, C. ; Zaquine, I. ; Frey, R.
Author_Institution :
Dept. Images, Ecole Nat. Superieure des Telecommun., Paris, France
Abstract :
Summary from only given. In this paper we show that the photodarkening effect arises when Auger recombination takes place in the nanocrystallites. The experimental study is performed through time-resolved measurements of the diffraction efficiency of gratings encoded in the semiconductor doped glasses (SCDG) by the interference of two nanosecond duration laser pulses.
Keywords :
Auger effect; diffraction gratings; electron-hole recombination; high-speed optical techniques; measurement by laser beam; nanostructured materials; optical glass; photochromism; semiconductor doped glasses; semiconductor doping; time resolved spectra; Auger recombination; diffraction efficiency; gratings; nanocrystallites; nanosecond duration laser pulse interference; photodarkening effect; photodarkening process; semiconductor doped glasses; semiconductor-doped glasses; time-resolved measurements; Absorption; Conducting materials; Crystallization; Diffraction; Electron traps; Glass; Optimized production technology; Photochromism; Radiative recombination; Refractive index;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 1996. QELS '96., Summaries of Papers Presented at the
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
1-55752-444-0
