DocumentCode :
3553700
Title :
Staggered oxide C4D structure with clocked source repeater
Author :
Tchon, W.E. ; Huang, J.S.T. ; Huang, J.S.T.
Author_Institution :
Honeywell Information Systems Inc., Phoenix, Arizona
Volume :
19
fYear :
1973
fDate :
1973
Firstpage :
27
Lastpage :
28
Abstract :
CCDs show promise for high density serial storage. A novel 2-phase C4D shift register is described in which the charge storage barrier is produced by a staggered oxide structure
Keywords :
Aluminum; Annealing; Charge coupled devices; Clocks; Etching; Information systems; Repeaters; Shift registers; Silicon; Voltage control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1973 International
Type :
conf
DOI :
10.1109/IEDM.1973.188638
Filename :
1477515
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3553700
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