Title :
A very high speed low power bipolar integrated circuit process
Author_Institution :
TRW Systems Group, Redondo Beach, California
Keywords :
Bipolar integrated circuits; Boron; Contact resistance; Delay; Etching; Frequency; Integrated circuit yield; Oxidation; Power dissipation; Silicon;
Conference_Titel :
Electron Devices Meeting, 1973 International
DOI :
10.1109/IEDM.1973.188641
