DocumentCode
3553713
Title
Threshold voltage controllability in double diffused-MOS transistors
Author
Pocha, M.D. ; Gonzalez, A.G. ; Dutton, R.W.
Author_Institution
Stanford University, Stanford, California
Volume
19
fYear
1973
fDate
1973
Firstpage
68
Lastpage
71
Abstract
Processing dependencies of D-MOS threshold voltage are described in this paper. An efficient mini-computer program was written to calculate doping profiles based on processing parameters. D-MOS structures were fabricated to determine empirical program parameters. Using computer simulation the threshold dependencies on boron predeposition and channel length, the two most sensitive processing parameters, were studied.
Keywords
Bandwidth; Boron; Circuits and systems; Computer simulation; Controllability; Doping profiles; Equations; Fabrication; Impurities; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1973 International
Type
conf
DOI
10.1109/IEDM.1973.188650
Filename
1477527
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