A double-diffused MNOS transistor as a new non-volatile memory

A new device structure for MNOS non-volatile memory is proposed for the purpose of getting higher writing speed and lower writing voltage. Basic concept is quite analogous to the double-diffused MOS transistor, where the gate oxide is replaced by a combination of the ultrathin oxide of silicon and the silicon nitride. When operated by the hybridization mode of the direct tunneling and the avalanche injection, typical results are as follows: (a) writing time is reduced to less than 100 ns, and (b) writing voltage is about 25 volts which is 10 volts lower than the conventional MNOS structure with the same nitride and oxide thicknesses of 400 Å and 16.5 Å respectively.