DocumentCode :
3553719
Title :
Hg.8 Cd.2 Te (PC)detectors under high optical flux densities
Author :
Bartoli, F. ; Allen, R. ; Esterowitz, L. ; Kruer, M.
Author_Institution :
Naval Research Laboratory, Washington, D. C.
Volume :
19
fYear :
1973
fDate :
1973
Firstpage :
89
Lastpage :
91
Abstract :
The performance of n-type Hg0.8 Cd0.2 Te (PC) detectors under high optical flux densities was investigated. Detector photoconductivity and response time were measured, in the presence of 10.6 µm laser radiation. Flux densities, Φ, were varied over four orders of magnitude up to a maximum level of 
photons/cm2-sec (i.e approximately 40 w/cm2). For high flux levels the photoconductivity varies as the cube root of the incident flux and the detector response time varies as 
. It is concluded that the observed saturation in photoconductivity is due to the decrease in carrier lifetime with carrier concentration. The dominant recombination mechanism at high flux levels was determined to be Auger recombination. Evidence is found that at low flux levels other recombination processes may also be important.
photons/cm2-sec (i.e approximately 40 w/cm2). For high flux levels the photoconductivity varies as the cube root of the incident flux and the detector response time varies as . It is concluded that the observed saturation in photoconductivity is due to the decrease in carrier lifetime with carrier concentration. The dominant recombination mechanism at high flux levels was determined to be Auger recombination. Evidence is found that at low flux levels other recombination processes may also be important.Keywords :
Charge carrier lifetime; Delay; Detectors; Mercury (metals); Optical pulses; Optical saturation; Photoconductivity; Pulse measurements; Radiative recombination; Time measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1973 International
Type :
conf
DOI :
10.1109/IEDM.1973.188655
Filename :
1477532
Link To Document :
