Title :
New semiconductor devices of ultra-high breakdown voltage
Author :
Matsushita, Teruo ; Hayashi, H. ; Yagi, H.
Author_Institution :
Sony Corporation, Atsugi, Kanagawa, Japan
Keywords :
Breakdown voltage; Conductivity; Electric breakdown; Semiconductor devices; Size control; Space charge; Substrates; Switches; Thyristors; Yagi-Uda antennas;
Conference_Titel :
Electron Devices Meeting, 1973 International
DOI :
10.1109/IEDM.1973.188660
