Title :
New gate structure for high power thyristor
Author_Institution :
Hitachi Ltd., Ibaraki, Japan
Abstract :
This paper describes a new gate thyristor which has advantages that the di/dt and dv/dt capabilities are large, the gate voltage for firing is high, and the unbalance of forward currents through a plurality of devices connected directly in Parallel is small.
Keywords :
Bonding; Cathodes; Delay effects; Laboratories; Microwave devices; Microwave theory and techniques; Pulse amplifiers; Testing; Thyristors; Voltage;
Conference_Titel :
Electron Devices Meeting, 1973 International
DOI :
10.1109/IEDM.1973.188661
