DocumentCode
3553725
Title
New gate structure for high power thyristor
Author
Terasawa, Y.
Author_Institution
Hitachi Ltd., Ibaraki, Japan
Volume
19
fYear
1973
fDate
1973
Firstpage
111
Lastpage
112
Abstract
This paper describes a new gate thyristor which has advantages that the di/dt and dv/dt capabilities are large, the gate voltage for firing is high, and the unbalance of forward currents through a plurality of devices connected directly in Parallel is small.
Keywords
Bonding; Cathodes; Delay effects; Laboratories; Microwave devices; Microwave theory and techniques; Pulse amplifiers; Testing; Thyristors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1973 International
Type
conf
DOI
10.1109/IEDM.1973.188661
Filename
1477538
Link To Document