Title :
The drain-source protected MNOS memory device and memory endurance
Author :
Cricchi, J.R. ; Blaha, F.C. ; Fitzpatrick, M.D.
Author_Institution :
Westinghouse Electric Corporation, Baltimore, Maryland
Keywords :
Circuits; Digital signal processing; Intrusion detection; Laboratories; Large scale integration; Protection; Random access memory; Tunneling; Voltage; Writing;
Conference_Titel :
Electron Devices Meeting, 1973 International
DOI :
10.1109/IEDM.1973.188665
