DocumentCode
3553732
Title
A new surface charge analog store
Author
Baertsch, R.D. ; Engeler, W.E. ; Tiemann, J.J.
Author_Institution
General Electric Corporate Research Development, Schenectady, New York
Volume
19
fYear
1973
fDate
1973
Firstpage
134
Lastpage
137
Abstract
The maximum delay-bandwidth product achievable in a serial charge transfer device is set by charge transfer inefficiency. This limitation can be addressed by improving the transfer efficiency of the transfer elements themselves, or by adopting a parallel architecture so that the number of transfers required for each signal packet is reduced. A new device structure is presented which uses a parallel architecture to solve this problem while maintaining most of the flexibility of the serial transfer approach. In this structure each charge packet is gated into a charge transfer cell where it remains until it is replaced. A non-destructive readout is achieved by sloshing the charge back and forth within the cell to obtain a capacitive pick-up on an overlying output electrode. With a simple experimental device, over 105readings of a single charge packet has been demonstrated. In this experiment the charge was transferred
times. The results obtained in this experiment are equivalent to those obtained with a serial charge transfer device with a transfer efficiency of 0.999999.
times. The results obtained in this experiment are equivalent to those obtained with a serial charge transfer device with a transfer efficiency of 0.999999.Keywords
Charge coupled devices; Charge transfer; Clocks; Delay lines; Electrodes; Parallel architectures; Research and development; Reservoirs; Transversal filters;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1973 International
Type
conf
DOI
10.1109/IEDM.1973.188667
Filename
1477544
Link To Document