• DocumentCode
    3553732
  • Title

    A new surface charge analog store

  • Author

    Baertsch, R.D. ; Engeler, W.E. ; Tiemann, J.J.

  • Author_Institution
    General Electric Corporate Research Development, Schenectady, New York
  • Volume
    19
  • fYear
    1973
  • fDate
    1973
  • Firstpage
    134
  • Lastpage
    137
  • Abstract
    The maximum delay-bandwidth product achievable in a serial charge transfer device is set by charge transfer inefficiency. This limitation can be addressed by improving the transfer efficiency of the transfer elements themselves, or by adopting a parallel architecture so that the number of transfers required for each signal packet is reduced. A new device structure is presented which uses a parallel architecture to solve this problem while maintaining most of the flexibility of the serial transfer approach. In this structure each charge packet is gated into a charge transfer cell where it remains until it is replaced. A non-destructive readout is achieved by sloshing the charge back and forth within the cell to obtain a capacitive pick-up on an overlying output electrode. With a simple experimental device, over 105readings of a single charge packet has been demonstrated. In this experiment the charge was transferred 2 \\times 10^{5} times. The results obtained in this experiment are equivalent to those obtained with a serial charge transfer device with a transfer efficiency of 0.999999.
  • Keywords
    Charge coupled devices; Charge transfer; Clocks; Delay lines; Electrodes; Parallel architectures; Research and development; Reservoirs; Transversal filters;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1973 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1973.188667
  • Filename
    1477544