DocumentCode :
3553732
Title :
A new surface charge analog store
Author :
Baertsch, R.D. ; Engeler, W.E. ; Tiemann, J.J.
Author_Institution :
General Electric Corporate Research Development, Schenectady, New York
Volume :
19
fYear :
1973
fDate :
1973
Firstpage :
134
Lastpage :
137
Abstract :
The maximum delay-bandwidth product achievable in a serial charge transfer device is set by charge transfer inefficiency. This limitation can be addressed by improving the transfer efficiency of the transfer elements themselves, or by adopting a parallel architecture so that the number of transfers required for each signal packet is reduced. A new device structure is presented which uses a parallel architecture to solve this problem while maintaining most of the flexibility of the serial transfer approach. In this structure each charge packet is gated into a charge transfer cell where it remains until it is replaced. A non-destructive readout is achieved by sloshing the charge back and forth within the cell to obtain a capacitive pick-up on an overlying output electrode. With a simple experimental device, over 105readings of a single charge packet has been demonstrated. In this experiment the charge was transferred 2 \\times 10^{5} times. The results obtained in this experiment are equivalent to those obtained with a serial charge transfer device with a transfer efficiency of 0.999999.
Keywords :
Charge coupled devices; Charge transfer; Clocks; Delay lines; Electrodes; Parallel architectures; Research and development; Reservoirs; Transversal filters;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1973 International
Type :
conf
DOI :
10.1109/IEDM.1973.188667
Filename :
1477544
Link To Document :
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