Title :
Device design considerations for ion implanted MOSFETs
Author :
Rideout, V.L. ; Gaensslen, F.H. ; LeBlanc, A.
Author_Institution :
IBM Thomas J. Watson Research Center, Yorktown Heights, N. Y.
Keywords :
Conductivity; Doping profiles; FETs; Implants; Ion implantation; MOSFETs; Predictive models; Switches; Switching circuits; Threshold voltage;
Conference_Titel :
Electron Devices Meeting, 1973 International
DOI :
10.1109/IEDM.1973.188671
