DocumentCode :
3553737
Title :
Ion implanted MOSFETs with very short channel lengths
Author :
Dennard, R.H. ; Gaensslen, F.H. ; Yu, H.N. ; Rideout, V.L. ; Bassous, E. ; LeBlanc, A.
Author_Institution :
IBM Thomas J. Watson Research Center, Yorktown Heights, N. Y.
Volume :
19
fYear :
1973
fDate :
1973
Firstpage :
152
Lastpage :
155
Keywords :
Dielectrics and electrical insulation; Doping; Electric variables; Implants; Ion implantation; MOSFETs; Merging; Thickness control; Threshold voltage; Voltage control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1973 International
Type :
conf
DOI :
10.1109/IEDM.1973.188672
Filename :
1477549
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3553737
بازگشت