DocumentCode
3553737
Title
Ion implanted MOSFETs with very short channel lengths
Author
Dennard, R.H. ; Gaensslen, F.H. ; Yu, H.N. ; Rideout, V.L. ; Bassous, E. ; LeBlanc, A.
Author_Institution
IBM Thomas J. Watson Research Center, Yorktown Heights, N. Y.
Volume
19
fYear
1973
fDate
1973
Firstpage
152
Lastpage
155
Keywords
Dielectrics and electrical insulation; Doping; Electric variables; Implants; Ion implantation; MOSFETs; Merging; Thickness control; Threshold voltage; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1973 International
Type
conf
DOI
10.1109/IEDM.1973.188672
Filename
1477549
Link To Document