Title :
Near-field optical microscopy of single quantum wires
Author :
Gershoni, D. ; Pfeiffer, Loren
Author_Institution :
Dept. of Phys., Technion-Israel Inst. of Technol., Haifa, Israel
Abstract :
Summary form only given. Among the most promising ways to achieve the goal of fabricating one-dimensional quantum structures such as quantum wires and zero-dimensional quantum structures such as quantum dots at the same degree of perfection achieved in the two-dimensional quantum systems (quantum wells) is cleaved edge overgrowth. We report on the first low temperature near-field scanning optical microscopy study of a single, nanometer dimension, cleaved edge overgrown quantum wire fabricated by this technique.
Keywords :
epitaxial growth; image resolution; low-temperature techniques; optical fabrication; optical microscopy; optical scanners; photoluminescence; semiconductor growth; semiconductor quantum wires; cleaved edge overgrowth; low temperature near-field scanning optical microscopy study; near-field optical microscopy; one-dimensional quantum structure fabrication; quantum dots; quantum wires; single nanometer dimension cleaved edge overgrown quantum wire; single quantum wires; zero-dimensional quantum structures; Autocorrelation; Excitons; Luminescence; Optical microscopy; Physics; Pulse measurements; Quantum dots; Spatial resolution; Temperature; Wires;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 1996. QELS '96., Summaries of Papers Presented at the
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
1-55752-444-0