Title :
A low resistance protection diode for MIS circuits
Author :
Orchard-Webb, J.H.
Author_Institution :
Plessey Semiconductors, Wiltshire, England
Abstract :
The structure and electrical characteristics of a gate protection diode suitable for use in electrically hostile environments is described.
Keywords :
Breakdown voltage; Capacitance measurement; Capacitors; Circuit testing; Conducting materials; Diodes; Electrical resistance measurement; Gate leakage; Protection; Surface resistance;
Conference_Titel :
Electron Devices Meeting, 1973 International
DOI :
10.1109/IEDM.1973.188697
