DocumentCode
3553765
Title
A low resistance protection diode for MIS circuits
Author
Orchard-Webb, J.H.
Author_Institution
Plessey Semiconductors, Wiltshire, England
Volume
19
fYear
1973
fDate
1973
Firstpage
240
Lastpage
243
Abstract
The structure and electrical characteristics of a gate protection diode suitable for use in electrically hostile environments is described.
Keywords
Breakdown voltage; Capacitance measurement; Capacitors; Circuit testing; Conducting materials; Diodes; Electrical resistance measurement; Gate leakage; Protection; Surface resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1973 International
Type
conf
DOI
10.1109/IEDM.1973.188697
Filename
1477574
Link To Document