DocumentCode
3553766
Title
A new isolation structure for high density LSI
Author
Iwamatsu, Shinnosuke ; Meguro, S. ; Shimizu, S.
Author_Institution
Hitachi Ltd., Tokyo, Japan
Volume
19
fYear
1973
fDate
1973
Firstpage
244
Lastpage
247
Keywords
Amorphous materials; Conductivity; Epitaxial growth; Epitaxial layers; Etching; FETs; Integrated circuit interconnections; Large scale integration; Substrates; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1973 International
Type
conf
DOI
10.1109/IEDM.1973.188698
Filename
1477575
Link To Document