Title :
A new isolation structure for high density LSI
Author :
Iwamatsu, Shinnosuke ; Meguro, S. ; Shimizu, S.
Author_Institution :
Hitachi Ltd., Tokyo, Japan
Keywords :
Amorphous materials; Conductivity; Epitaxial growth; Epitaxial layers; Etching; FETs; Integrated circuit interconnections; Large scale integration; Substrates; Temperature;
Conference_Titel :
Electron Devices Meeting, 1973 International
DOI :
10.1109/IEDM.1973.188698
