Title :
A buried metallization and its application to a multilayer system
Author :
Takagi, M. ; Terada, C. ; Nakayama, K.
Author_Institution :
Fujitsu Limited, Kawasaki, Japan
Abstract :
For leveling the uneven surface which is usually created in the patterning process of interconnection metal, an electro-chemical method has been developed by which aluminum is buried into a groove made in the CVD SiO2layer. This technique is called Buried Metallization Method. The multilayer metallization of more than triple layers is enabled to form without using any new material.
Keywords :
Aluminum; Anodes; Chemical vapor deposition; Dielectric materials; Electrodes; Etching; Inorganic materials; Integrated circuit interconnections; Integrated circuit metallization; Nonhomogeneous media;
Conference_Titel :
Electron Devices Meeting, 1973 International
DOI :
10.1109/IEDM.1973.188705
