• DocumentCode
    3553774
  • Title

    A buried metallization and its application to a multilayer system

  • Author

    Takagi, M. ; Terada, C. ; Nakayama, K.

  • Author_Institution
    Fujitsu Limited, Kawasaki, Japan
  • Volume
    19
  • fYear
    1973
  • fDate
    1973
  • Firstpage
    269
  • Lastpage
    271
  • Abstract
    For leveling the uneven surface which is usually created in the patterning process of interconnection metal, an electro-chemical method has been developed by which aluminum is buried into a groove made in the CVD SiO2layer. This technique is called Buried Metallization Method. The multilayer metallization of more than triple layers is enabled to form without using any new material.
  • Keywords
    Aluminum; Anodes; Chemical vapor deposition; Dielectric materials; Electrodes; Etching; Inorganic materials; Integrated circuit interconnections; Integrated circuit metallization; Nonhomogeneous media;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1973 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1973.188705
  • Filename
    1477582
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3553774