Title :
Silicon Schottky retinas for infrared imaging
Author :
Shepherd, F.D., Jr. ; Yang, A.C.
Author_Institution :
Air Force Systems Command, Bedford, Massachusetts
Abstract :
Silicon Schottky barrier diode arrays, operating in a high sensitivity storage mode, provide the basis for a new class of IR imaging sensor. A Pd on p-Si retina which has a wavelength dependent quantum efficiency from 1 to 3.5 µm is described, This device has a noise equivalent temperature of .17K against a 300K background. The operating temperature is 120K and retina nonuniformities cause negligible reduction in sensitivity.
Keywords :
Image storage; Infrared image sensors; Infrared imaging; Optical imaging; Retina; Schottky barriers; Schottky diodes; Sensor arrays; Silicon; Temperature sensors;
Conference_Titel :
Electron Devices Meeting, 1973 International
DOI :
10.1109/IEDM.1973.188717
