Title :
Characterization of bipolar devices
Author :
Ruch, J.G. ; Scharfetter, D.L.
Author_Institution :
Bell Laboratories, Murray Hill, N. J.
Abstract :
Transistor simulators, computer programs which calculate device characteristics as determined by materials properties and impurity profiles, can be employed directly in the performance evaluation of circuit designs. To be practical, two-dimensional effects must be included while simulation costs must not be prohibitive. The program TRANSIM (TRANsistor SIMulator), described in this paper, employs a highly efficient algorithm specialized for bipolar transistor simulation, which reduces simulation costs for one-dimensional analysis by an order of magnitude over previously published approaches. Two-dimensional effects are approximated without the complexity of a full two-dimensional analysis.
Keywords :
Algorithm design and analysis; Analytical models; Bipolar transistors; Circuit simulation; Circuit synthesis; Computational modeling; Computer simulation; Costs; Impurities; Material properties;
Conference_Titel :
Electron Devices Meeting, 1973 International
DOI :
10.1109/IEDM.1973.188733
