Title :
S-band microwave power FET
Author :
Driver, M.C. ; Geisler, M.J. ; Barrett, D.L. ; Kim, H.E.
Author_Institution :
Westinghouse Research Laboratories, Pittsburgh, Pennsylvania
Keywords :
Bonding; Fabrication; Fixtures; Gallium arsenide; Germanium alloys; Gold alloys; Microwave FETs; Power generation; Semiconductor device measurement; Wire;
Conference_Titel :
Electron Devices Meeting, 1973 International
DOI :
10.1109/IEDM.1973.188738
