DocumentCode
3553822
Title
InSb MIS structures for infrared imaging devices
Author
Kim, J.C.
Author_Institution
General Electric Company, Syracuse, New York
Volume
19
fYear
1973
fDate
1973
Firstpage
419
Lastpage
422
Keywords
Capacitance; Capacitance-voltage characteristics; Current measurement; Dark current; Frequency measurement; Infrared imaging; Interface states; MIS devices; Pulse measurements; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1973 International
Type
conf
DOI
10.1109/IEDM.1973.188748
Filename
1477625
Link To Document