Title :
InSb MIS structures for infrared imaging devices
Author_Institution :
General Electric Company, Syracuse, New York
Keywords :
Capacitance; Capacitance-voltage characteristics; Current measurement; Dark current; Frequency measurement; Infrared imaging; Interface states; MIS devices; Pulse measurements; Voltage;
Conference_Titel :
Electron Devices Meeting, 1973 International
DOI :
10.1109/IEDM.1973.188748
