Title :
An inductive phase delay in the retarding field region of Schottky barrier BARITT diodes
Author :
Oakes, J.G. ; Lee, C.A.
Author_Institution :
Cornell University, Ithaca, New York
Abstract :
A numerical integration of Poisson´s equation and the current equation is performed using the constant hole density at the Schottky barrier as a boundary condition. The resulting small-signal device admittances are in good agreement with experimentally observed values. Better negative conductance is predicted at low current densities when the phase shift near the Schottky barrier is included in the analysis.
Keywords :
Boundary conditions; Delay; Doping; Equations; Frequency; Neodymium; Schottky barriers; Schottky diodes; Solids; Voltage;
Conference_Titel :
Electron Devices Meeting, 1973 International
DOI :
10.1109/IEDM.1973.188764
