DocumentCode :
3553843
Title :
Design, characterization and reliability of 6-GHz silicon IMPATT diode
Author :
Kuvås, Reidar L. ; Rupp, John A.
Author_Institution :
Bell Laboratories, Reading, Pennsylvania
Volume :
19
fYear :
1973
fDate :
1973
Firstpage :
489
Lastpage :
492
Abstract :
A silicon IMPATT diode has been developed for use in a one-watt transmitter amplifier and for local oscillator applications in the 6-GHz common carrier band. The procedure for optimizing the design and establishing diode specifications is outlined. The development of a semi-automated test set for rapid and reliable measurements of large-signal admittance, power and noise is described. Accelerated DC and RF aging studies predict a median lifetime greater than 107hours for the final design diode at a nominal junction operating temperature of 200°C.
Keywords :
Admittance measurement; Design optimization; Diodes; Local oscillators; Noise measurement; Power measurement; Radiofrequency amplifiers; Silicon; Testing; Transmitters;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1973 International
Type :
conf
DOI :
10.1109/IEDM.1973.188767
Filename :
1477644
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3553843
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