DocumentCode
3553843
Title
Design, characterization and reliability of 6-GHz silicon IMPATT diode
Author
Kuvås, Reidar L. ; Rupp, John A.
Author_Institution
Bell Laboratories, Reading, Pennsylvania
Volume
19
fYear
1973
fDate
1973
Firstpage
489
Lastpage
492
Abstract
A silicon IMPATT diode has been developed for use in a one-watt transmitter amplifier and for local oscillator applications in the 6-GHz common carrier band. The procedure for optimizing the design and establishing diode specifications is outlined. The development of a semi-automated test set for rapid and reliable measurements of large-signal admittance, power and noise is described. Accelerated DC and RF aging studies predict a median lifetime greater than 107hours for the final design diode at a nominal junction operating temperature of 200°C.
Keywords
Admittance measurement; Design optimization; Diodes; Local oscillators; Noise measurement; Power measurement; Radiofrequency amplifiers; Silicon; Testing; Transmitters;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1973 International
Type
conf
DOI
10.1109/IEDM.1973.188767
Filename
1477644
Link To Document