Title :
KA-Band IMPATT diode reliability
Author_Institution :
Massachusetts Institute of Technology, Lexington, Massachusetts
Abstract :
Constant stress (temperature) operating tests have been conducted on silicon Ka-band diodes. Statistics of failure fit a lognormal distribution except near the early-failure tail; deviations are ascribed to manufacturing process non-uniformities. Analysis of failed devices shows a single predominant failure mechanism, gold contamination of the p-n junction area, observable at junction operating temperatures between 230°C and 350°C.
Keywords :
Diodes; Failure analysis; Manufacturing processes; P-n junctions; Probability distribution; Silicon; Statistical distributions; Stress; Temperature; Testing;
Conference_Titel :
Electron Devices Meeting, 1973 International
DOI :
10.1109/IEDM.1973.188768
