DocumentCode
3553845
Title
The effects of doping profile, material parameters and operating conditions on the noise properties of IMPATT devices
Author
Chao, C. ; Haddad, G.I.
Author_Institution
The University of Michigan, Ann Arbor, Michigan
Volume
19
fYear
1973
fDate
1973
Firstpage
497
Lastpage
501
Abstract
The dependence of avalanche noise on the device structure, junction curvature, operating conditions and material parameters is studied systematically. AM and FM noise of oscillators and optimum noise measure of stable amplifiers under high-power conditions as functions of RF power, dc current density, frequency and avalanche region width are presented.
Keywords
Current measurement; Density measurement; Doping profiles; Frequency measurement; High power amplifiers; Noise measurement; Oscillators; Power measurement; Radio frequency; Radiofrequency amplifiers;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1973 International
Type
conf
DOI
10.1109/IEDM.1973.188769
Filename
1477646
Link To Document