Noise properties of transferred-electron oscillators

This paper summarizes several results from a comprehensive study of TE device noise properties. The general noise analysis of Sweet for a TE device in a simple parallel resonant circuit has been extended to include both bias and RF voltage variation of the nonlinear device admittance. The RF components of AM and FM noise become coupled and the video component of FM noise is altered as a result of introducing the RF voltage dependence o This theory has been applied to a particular TE device model interacting with a detailed RF circuit model for an X-band waveguide cavity. The variations of the video and RF components of AM and FM noise have been computed as functions of load conductance, bias voltage, cavity tuning and doping density for uniformly doped devices. This paper includes a brief discussion of the theory and some of the variations of video noise components of AM and FM noise.