DocumentCode
3553850
Title
Pulse amplifier EBS for high voltage modulators
Author
Knight, R.I. ; Bell, B.W. ; Bates, D.J.
Author_Institution
Watkins-Johnson Company, Palo Alto, California
Volume
19
fYear
1973
fDate
1973
Firstpage
516
Lastpage
519
Abstract
A pulse amplifier EBS (Electron Bombarded Semiconductor) utilizing a grid controlled electron beam to produce an amplified current in a reverse biased semiconductor diode has been developed. Output pulses of up to 400 V with a 3 nanosecond risetime are produced with this device. The design of the electron gun and the semiconductor diode used in the EBS pulse amplifier are described along with a technique for simultaneously vacuum processing several devices. Static operating characteristics for the EBS pulse amplifier over a wide range of diode voltages and output currents are discussed, and the effect of the choice of operating point on the transient response of the EBS pulse amplifier is considered.
Keywords
Breakdown voltage; Cathodes; Electron beams; Life testing; Pulse amplifiers; Pulse modulation; Semiconductor device testing; Semiconductor diodes; Temperature; Vacuum breakdown;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1973 International
Type
conf
DOI
10.1109/IEDM.1973.188773
Filename
1477650
Link To Document