DocumentCode :
3553855
Title :
Light emitting devices in the U.K.
Author :
Dean, P.J.
Author_Institution :
Royal Radar Establishment, Malvern, Worcestershire, UK
fYear :
1973
fDate :
3-5 Dec. 1973
Firstpage :
535
Lastpage :
535
Abstract :
Summary form only given, as follows. This invited review deals solely with solidstate light emitters, and excludes work on plasma panels and subtractive displays. GaP LEDs were pioneered in the UK in the early 1960´s and still receive much attention. Conventional red and green devices are in production. Research is concentrating on new fabrication techniques. GaAsP diodes are also in production. Research proceeds also on these additional materials: GainP, GaN, ZnSe, ZnS, and rare-earth phosphors (used as photon energy up-converters on GaAs IR diodes). ZnSe diodes are MIS structures. Since LEDs are too expensive for large displays, the UK program has concentrated on ZnS dc electroluminiscent powder panels. These various areas of work will be set in perspective in the talk given at the conference.
Keywords :
Gallium arsenide; Gallium nitride; Light emitting diodes; Plasma devices; Plasma displays; Plasma materials processing; Radar; Zinc compounds;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1973 International
Conference_Location :
Washington, DC, USA
Type :
conf
DOI :
10.1109/IEDM.1973.188778
Filename :
1477655
Link To Document :
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