• DocumentCode
    3553855
  • Title

    Light emitting devices in the U.K.

  • Author

    Dean, P.J.

  • Author_Institution
    Royal Radar Establishment, Malvern, Worcestershire, UK
  • fYear
    1973
  • fDate
    3-5 Dec. 1973
  • Firstpage
    535
  • Lastpage
    535
  • Abstract
    Summary form only given, as follows. This invited review deals solely with solidstate light emitters, and excludes work on plasma panels and subtractive displays. GaP LEDs were pioneered in the UK in the early 1960´s and still receive much attention. Conventional red and green devices are in production. Research is concentrating on new fabrication techniques. GaAsP diodes are also in production. Research proceeds also on these additional materials: GainP, GaN, ZnSe, ZnS, and rare-earth phosphors (used as photon energy up-converters on GaAs IR diodes). ZnSe diodes are MIS structures. Since LEDs are too expensive for large displays, the UK program has concentrated on ZnS dc electroluminiscent powder panels. These various areas of work will be set in perspective in the talk given at the conference.
  • Keywords
    Gallium arsenide; Gallium nitride; Light emitting diodes; Plasma devices; Plasma displays; Plasma materials processing; Radar; Zinc compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1973 International
  • Conference_Location
    Washington, DC, USA
  • Type

    conf

  • DOI
    10.1109/IEDM.1973.188778
  • Filename
    1477655