DocumentCode :
3553856
Title :
Monolithic displays in GaP
Author :
Schumaker, N.E. ; Kuhn, M. ; Koszi, L.A.
Author_Institution :
Bell Laboratories, Murray Hill, New Jersey
Volume :
19
fYear :
1973
fDate :
1973
Firstpage :
536
Lastpage :
539
Abstract :
Monolithic displays in GaP can provide potentially low power, high brightness, red or green display devices. Three basic device configurations (planar, mesa, dome) have been analyzed to determine their relative effectiveness for use in monolithic applications. The basic device structures have been fabricated from GaP wafers prepared by double liquid phase epitaxy. These structures have been studied to identify any inherent technological limitations associated with their fabrication.
Keywords :
Brightness; Displays; Electrooptic devices; Epitaxial growth; Fabrication; Lenses; Optical devices; Optical reflection; Plastics; Reflectivity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1973 International
Type :
conf
DOI :
10.1109/IEDM.1973.188779
Filename :
1477656
Link To Document :
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