• DocumentCode
    3553856
  • Title

    Monolithic displays in GaP

  • Author

    Schumaker, N.E. ; Kuhn, M. ; Koszi, L.A.

  • Author_Institution
    Bell Laboratories, Murray Hill, New Jersey
  • Volume
    19
  • fYear
    1973
  • fDate
    1973
  • Firstpage
    536
  • Lastpage
    539
  • Abstract
    Monolithic displays in GaP can provide potentially low power, high brightness, red or green display devices. Three basic device configurations (planar, mesa, dome) have been analyzed to determine their relative effectiveness for use in monolithic applications. The basic device structures have been fabricated from GaP wafers prepared by double liquid phase epitaxy. These structures have been studied to identify any inherent technological limitations associated with their fabrication.
  • Keywords
    Brightness; Displays; Electrooptic devices; Epitaxial growth; Fabrication; Lenses; Optical devices; Optical reflection; Plastics; Reflectivity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1973 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1973.188779
  • Filename
    1477656