DocumentCode :
3553857
Title :
Multi-color light emitting diodes with a double junction structure
Author :
Saitoh, T. ; Matsubara, S. ; Suzuki, T. ; Minagawa, S.
Author_Institution :
Hitachi Ltd., Tokyo, Japan
Volume :
19
fYear :
1973
fDate :
1973
Firstpage :
540
Lastpage :
543
Abstract :
A GaAs:Si-GaAsP heterostructure chip coated with NaYF4 :Yb,Er phosphor has been fabricated to demonstrate a multi-color operation. The one-chip LEDs with a double junction showed a centro-symmetrical distribution of the light intensity of the each color, and assured uniformity of intermediate hue between green and red by adjusting the thickness of the phosphor. The brightness of green and red was more than 1OO ft.L at the current density of 20 A/cm2and the power efficiency was 
for green. The brightness of the green light was lower than that of 250 fL at 20 A/cm2for a single LED, because of the refraction of infrared light in the GaAsP layer.
for green. The brightness of the green light was lower than that of 250 fL at 20 A/cm2for a single LED, because of the refraction of infrared light in the GaAsP layer.Keywords :
Brightness; Current density; Gold alloys; Laboratories; Light emitting diodes; Phosphors; Silicon alloys; Surface resistance; Wafer bonding; Zinc;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1973 International
Type :
conf
DOI :
10.1109/IEDM.1973.188780
Filename :
1477657
Link To Document :
