DocumentCode
3553879
Title
Application of Nicollian-Reisman model to negative point-to-plane corona oxidation of silicon
Author
Madani, M.R. ; Ajmera, P.K.
Author_Institution
Solid State Lab., Louisiana State Univ., Baton Rouge, LA, USA
fYear
1991
fDate
7-10 Apr 1991
Firstpage
388
Abstract
The Nicollian-Reisman oxidation model based on viscous flow principles is used to curve fit data obtained for the corona discharge oxidation of silicon. The application of this model to corona discharge oxidation of silicon in dry oxygen ambient indicates that the silicon oxidation process at a given temperature is more reaction-rate-controlled in corona discharge than the conventional thermal oxidation of silicon. The enhancement in the rate of oxidation with corona discharge is attributed in part to an increase in surface relaxation during oxidation
Keywords
corona; elemental semiconductors; oxidation; silicon; Nicollian-Reisman model; Si; corona discharge oxidation; dry O2 ambient; negative point-to-plane corona oxidation; oxidation rate enhancement; reaction rate control; surface relaxation; viscous flow principles; Corona; Laboratories; Oxidation; Process control; Silicon; Solid modeling; Solid state circuits; Surface discharges; Temperature control; Temperature distribution;
fLanguage
English
Publisher
ieee
Conference_Titel
Southeastcon '91., IEEE Proceedings of
Conference_Location
Williamsburg, VA
Print_ISBN
0-7803-0033-5
Type
conf
DOI
10.1109/SECON.1991.147779
Filename
147779
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