Title :
High-efficient graded-bandgap pGa1-xAlxAs-pGaAs-nGaAs solar cells
Author :
Konaga, M. ; Takahashi, K.
Author_Institution :
Tokyo Institute of Technology, Tokyo, JAPAN
Abstract :
Graded-bandgap pGa1-xAlxAs-pGaAs-nGaAs solar cell structures are analyzed. Such cells allow conversion efficiencies higher than conventional GaAs cells due to the reduction of the surface recombination effect. It is advantageous to use pGaAs layers of 1 µm thickness, since the diffusion length for electrons is 3 to 5 times larger than that for holes. The theoretical conversion efficiency is calculated for AMO(6000K) blackbody radiation and typical parameters assumed. The efficiency strongly depends on the drift field E in the graded-bandgap layer, and the maximum efficiency approaches 20%.
Keywords :
Absorption; Boundary conditions; Circuits; Current density; Electron mobility; Electronics packaging; Energy conversion; Equations; Gallium arsenide; Photonic band gap;
Conference_Titel :
Electron Devices Meeting, 1975 International
DOI :
10.1109/IEDM.1975.188833
