Grown junction GaAs solar cell

P(AlxGa1-xAs:Ge)-p(GaAs:Ge)-n⁺(GaAs:Te) solar cells have been fabricated using multiple layer liquid phase epitaxial (LPE) growth techniques. Germanium was used as the p-type dopant to eliminate impurity diffusion and to maximize minority carrier diffusion lengths. These procedures provide precise control of the thickness and carrier concentration of each individual layer.