• DocumentCode
    3553945
  • Title

    Grown junction GaAs solar cell

  • Author

    Shen, C.C. ; Pearson, G.L.

  • Author_Institution
    Stanford University, Stanford, California
  • Volume
    21
  • fYear
    1975
  • fDate
    1975
  • Firstpage
    99
  • Lastpage
    101
  • Abstract
    P(AlxGa1-xAs:Ge)-p(GaAs:Ge)-n+(GaAs:Te) solar cells have been fabricated using multiple layer liquid phase epitaxial (LPE) growth techniques. Germanium was used as the p-type dopant to eliminate impurity diffusion and to maximize minority carrier diffusion lengths. These procedures provide precise control of the thickness and carrier concentration of each individual layer.
  • Keywords
    Boats; Doping; Gallium arsenide; P-n junctions; Photonic band gap; Photovoltaic cells; Substrates; Tellurium; Testing; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1975 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1975.188834
  • Filename
    1478195
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3553945