DocumentCode :
3553948
Title :
Laser scanning of active semiconductor devices
Author :
Sawyer, D.E. ; Berning, D.W.
Author_Institution :
National Bureau of Standards, Washington, D.C.
Volume :
21
fYear :
1975
fDate :
1975
Firstpage :
111
Lastpage :
114
Abstract :
A laser scanner is described which can nondestructively explore electrical characteristics of semiconductor devices on a point-by-point basis. The results of applying the scanner to electronically map temperature distributions and hot spots in a power transistor are given. The results of mapping localized nonlinearities in electrical operation and 0.5 GHz response are also presented. Pictures show the progress of logic in a MOS shift register and demonstrate the ability to change at will the logical state of an embedded active cell with the laser.
Keywords :
Displays; Intensity modulation; Laser beams; Laser transitions; NIST; Power transistors; Semiconductor devices; Semiconductor lasers; Silicon; Surface emitting lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1975 International
Type :
conf
DOI :
10.1109/IEDM.1975.188837
Filename :
1478198
Link To Document :
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