DocumentCode
3553969
Title
Isolation of junction devices in GaAs1-x Px using electron bombardment
Author
Wada, Takao ; Uemura, Sashiro
Author_Institution
Mie University, Mie, Japan
Volume
21
fYear
1975
fDate
1975
Firstpage
192
Lastpage
195
Abstract
High energy electron bombardment produces high resistivity layers in n-type GaAsP. The resistivity of the specimen varied from 
-cm to 
-cm by the irradiation of 
electrons./ cm2at 7MeV. The light-emitting diodes (LED\´s) irradiated in this condition did not exhibit the any optical radiation. It will be shown that this new technique is useful for isolating GaAsP junction devices.
-cm to -cm by the irradiation of electrons./ cm2at 7MeV. The light-emitting diodes (LED\´s) irradiated in this condition did not exhibit the any optical radiation. It will be shown that this new technique is useful for isolating GaAsP junction devices.Keywords
Conductivity; Electroluminescence; Electron beams; Electron optics; Etching; Gallium arsenide; Laboratories; Light emitting diodes; Optical materials; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1975 International
Type
conf
DOI
10.1109/IEDM.1975.188856
Filename
1478217
Link To Document