DocumentCode :
3553975
Title :
Studies of M-I-S type solar cells fabricated on silicon
Author :
Shevenock, Steven ; Fonash, Stephen ; Geneczko, Jeannie
Author_Institution :
Pennsylvania State University, University Park, Pennsylvania
Volume :
21
fYear :
1975
fDate :
1975
Firstpage :
211
Lastpage :
212
Abstract :
Metal-insulator-semiconductor solar cells have been studied on silicon. The emphasis in this report is on M-I-S cells fabricated on n-type silicon. Results for M-S cells on this material have been poor to-date with efficiencies of only about 2% having been achieved at open circuit voltages of 0.250 volts. Using M-I-S cells on n-type silicon efficiencies of almost 9% have been obtained at open circuit voltages of better than 0.4 volts. Increase in the short circuit current has also been seen.
Keywords :
Coatings; Etching; Gold; Metal-insulator structures; Photovoltaic cells; Photovoltaic systems; Short circuit currents; Silicon; Solar power generation; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1975 International
Type :
conf
DOI :
10.1109/IEDM.1975.188861
Filename :
1478222
Link To Document :
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