Variables which influence silicon Schottky solar cell performance

Individual processing steps have been varied to determine the effect on Schottky barrier solar cell (SBSC) performance. A Si. wafer produces a better fill factor and current than does Si. Silicon resistivity of 0.4 or 2 Ω-cm results in comparable cells. Sputter deposition of the metal causes the metal atoms to penetrate the silicon which produces a lower voltage as a result of a reduced barrier height. I-V data suggest the presence of a tunneling component in the current. This is verified by an activation energy plot. A better understanding of these current mechanisms should lead to improved solar cell efficiency.