DocumentCode :
3553980
Title :
Detailed electrical and radiation characteristics of an induced junction silicon solar cell
Author :
Norman, C.E. ; Thomas, R.E.
Author_Institution :
Carleton University, Ottawa, Canada
Volume :
21
fYear :
1975
fDate :
1975
Firstpage :
226
Lastpage :
229
Abstract :
A recently developed induced junction solar cell (1) has been electrically characterized to determine its performance and how it may be improved through process optimization. Prototype cells are described in terms of their structure, fabrication and advantages over diffused junction cells. Several devices were subjected to ionizing radiation in the form of low energy electrons and x-rays. The novel methods used for electron irradiation and measuring its effect on the cells are described. While large variations in oxide charge and flatband voltage were observed, only minimal effects on the cells photovoltaic behaviour resulted. The radiation induced changes were found to be annealable.
Keywords :
Electrons; Fabrication; Ionizing radiation; Photovoltaic cells; Photovoltaic systems; Prototypes; Silicon; Solar power generation; Voltage; X-rays;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1975 International
Type :
conf
DOI :
10.1109/IEDM.1975.188866
Filename :
1478227
Link To Document :
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