DocumentCode
3553980
Title
Detailed electrical and radiation characteristics of an induced junction silicon solar cell
Author
Norman, C.E. ; Thomas, R.E.
Author_Institution
Carleton University, Ottawa, Canada
Volume
21
fYear
1975
fDate
1975
Firstpage
226
Lastpage
229
Abstract
A recently developed induced junction solar cell (1) has been electrically characterized to determine its performance and how it may be improved through process optimization. Prototype cells are described in terms of their structure, fabrication and advantages over diffused junction cells. Several devices were subjected to ionizing radiation in the form of low energy electrons and x-rays. The novel methods used for electron irradiation and measuring its effect on the cells are described. While large variations in oxide charge and flatband voltage were observed, only minimal effects on the cells photovoltaic behaviour resulted. The radiation induced changes were found to be annealable.
Keywords
Electrons; Fabrication; Ionizing radiation; Photovoltaic cells; Photovoltaic systems; Prototypes; Silicon; Solar power generation; Voltage; X-rays;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1975 International
Type
conf
DOI
10.1109/IEDM.1975.188866
Filename
1478227
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