• DocumentCode
    3553980
  • Title

    Detailed electrical and radiation characteristics of an induced junction silicon solar cell

  • Author

    Norman, C.E. ; Thomas, R.E.

  • Author_Institution
    Carleton University, Ottawa, Canada
  • Volume
    21
  • fYear
    1975
  • fDate
    1975
  • Firstpage
    226
  • Lastpage
    229
  • Abstract
    A recently developed induced junction solar cell (1) has been electrically characterized to determine its performance and how it may be improved through process optimization. Prototype cells are described in terms of their structure, fabrication and advantages over diffused junction cells. Several devices were subjected to ionizing radiation in the form of low energy electrons and x-rays. The novel methods used for electron irradiation and measuring its effect on the cells are described. While large variations in oxide charge and flatband voltage were observed, only minimal effects on the cells photovoltaic behaviour resulted. The radiation induced changes were found to be annealable.
  • Keywords
    Electrons; Fabrication; Ionizing radiation; Photovoltaic cells; Photovoltaic systems; Prototypes; Silicon; Solar power generation; Voltage; X-rays;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1975 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1975.188866
  • Filename
    1478227