• DocumentCode
    3553984
  • Title

    Microwave field-effect transistors from sulphur-implanted GaAs

  • Author

    Kellner, W. ; Kniepkamp, H. ; Ristow, D. ; Boroffka, H.

  • Author_Institution
    Siemens AG, München, Germany
  • Volume
    21
  • fYear
    1975
  • fDate
    1975
  • Firstpage
    238
  • Lastpage
    242
  • Abstract
    Sulphur implantation into semi-insulating GaAs has been used to fabricate 1,5µ-gate-MESFETs showing microwave gain equivalent to epitaxial FETs (MAG = 10 dB at 10 GHz) but higher noise. Room temperature implantation of S at an energy of 30 keV and a dose of 5.1012cm-2sputtered SiO2and Si3N4as encapsulants and heat treatments from 820 to 900°C have been used. Electrical activation was found to, depend critically on the substrate material. Si3N4-encapsulation gave slightly higher electrical activation than SiO2.
  • Keywords
    Annealing; Electromagnetic heating; Encapsulation; FETs; Gallium arsenide; Gold; MESFETs; Sputter etching; Substrates; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1975 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1975.188869
  • Filename
    1478230
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3553984