• DocumentCode
    3553985
  • Title

    Some aspects of GaAs FET reliability

  • Author

    Abbott, D.A. ; Turner, J.A.

  • Author_Institution
    The Plessey Company Limited, Caswell, U.K.
  • Volume
    21
  • fYear
    1975
  • fDate
    1975
  • Firstpage
    243
  • Lastpage
    246
  • Abstract
    The results of a short study into the reliability and failure modes of GaAs FETs are presented. Two failure modes have been observed during this study, and improved fabrication techniques that reduce their occurrence have been examined. The results obtained indicate that extremely reliable devices can be manufactured with a predicted mean time to failure in excess of 107hours at junction temperatures of 70°C. Room temperature life tests in excess of ½ million device hours lend support to these predictions.
  • Keywords
    Gallium arsenide; Germanium; Gold; Metallization; Microwave FETs; Noise figure; Schottky barriers; Schottky diodes; Temperature; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1975 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1975.188870
  • Filename
    1478231
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3553985