DocumentCode
3553996
Title
I2L II
Author
Cook, Bob ; McNally, Shawn H. ; San, Aung
Author_Institution
ITT Semiconductors, West Palm Beach, Florida
Volume
21
fYear
1975
fDate
1975
Firstpage
284
Lastpage
287
Abstract
Present I2L devices are limited in usable speed and current gain by the low performance of the inverse NPN transistor made with conventional bipolar processes. This report discusses new I2L structure variations that overcome these limitations. In addition, a new process is described where the intended isolation regions are anodized to form a conduction barrier. This new I2L II Process has already yielded NPN transistors with hFE = 250 and fT = 250MHz and is expected to extend I2L further into the high end of the speed power curve with fT > 500MHz and propagation delays of 5ns.
Keywords
Bipolar transistors; Boron; Breakdown voltage; Conductivity; Impurities; Iron; Performance gain; Process control; Propagation delay; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1975 International
Type
conf
DOI
10.1109/IEDM.1975.188880
Filename
1478241
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