• DocumentCode
    3554010
  • Title

    Numerical analysis of back-surface-field silicon solar cells

  • Author

    Fossum, Jerry G.

  • Author_Institution
    Sandia Laboratories, Albuquerque, New Mexico
  • fYear
    1975
  • fDate
    1-3 Dec. 1975
  • Firstpage
    339
  • Lastpage
    342
  • Abstract
    A proven semiconductor device analysis computer code has been used to numerically simulate back-surface-field silicon solar cells. The insight afforded by the one-dimensional solutions of ca~rrier transport in these cells has enabled the identification of pertinent physics describing the operation of these devices. With this analytical knowledge, discussions concerning the essential properties of an effective BSF solar cell were presented. The practicality of using silicon BSF cells for terrestrial applications, specifically in high-temperature, multiple-sun environments, was examined through the use of the device analysis code. The results of this study are encouraging and suggest that the highest-efficiency, most economical solar cells of the future may well be high-resistivity back-surface-field silicon cells.
  • Keywords
    Charge carrier lifetime; Electrons; Length measurement; Numerical analysis; Numerical simulation; Photovoltaic cells; Silicon; Spontaneous emission; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1975 International
  • Conference_Location
    Washigton, DC, USA
  • Type

    conf

  • DOI
    10.1109/IEDM.1975.188893
  • Filename
    1478254