DocumentCode :
3554010
Title :
Numerical analysis of back-surface-field silicon solar cells
Author :
Fossum, Jerry G.
Author_Institution :
Sandia Laboratories, Albuquerque, New Mexico
fYear :
1975
fDate :
1-3 Dec. 1975
Firstpage :
339
Lastpage :
342
Abstract :
A proven semiconductor device analysis computer code has been used to numerically simulate back-surface-field silicon solar cells. The insight afforded by the one-dimensional solutions of ca~rrier transport in these cells has enabled the identification of pertinent physics describing the operation of these devices. With this analytical knowledge, discussions concerning the essential properties of an effective BSF solar cell were presented. The practicality of using silicon BSF cells for terrestrial applications, specifically in high-temperature, multiple-sun environments, was examined through the use of the device analysis code. The results of this study are encouraging and suggest that the highest-efficiency, most economical solar cells of the future may well be high-resistivity back-surface-field silicon cells.
Keywords :
Charge carrier lifetime; Electrons; Length measurement; Numerical analysis; Numerical simulation; Photovoltaic cells; Silicon; Spontaneous emission; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1975 International
Conference_Location :
Washigton, DC, USA
Type :
conf
DOI :
10.1109/IEDM.1975.188893
Filename :
1478254
Link To Document :
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