Abstract :
A new super power RSR known as the T60 has been evolved from the successful, lower power T40 RSR. It is intended for application as the switch element in high power pulsers and modulators. The device is capable of switching 5000 Amps at 1200 volts and is well suited for stacking to higher voltages. Like its predecessor, the T40, the T60 is a two-terminal, four layer PNPN device closely related to the SCR or Thyristor. Unlike the SCR, however, it has no gate and is triggered by a rate of increase in anode-cathode voltage (dv/dt triggered). Dv/dt triggering results in a very large initial conduction area so that the device is capable of very high rate of current rise at turn-on. Current rise in excess of 2500 A/µsec to 5000 A are typical. Device characteristics, test procedures, test results, and applications are discussed. The device development was sponsored by the Air Force Weapons Lab, Kirtland AFB, New Mexico.