DocumentCode
3554020
Title
Gate-current-controlled plasma-coupled linear pnpn-devices
Author
Grekhov, I.V. ; Linitchuk, I.A. ; Shulekin, A.E. ; Tuchkevich, V.K.
Author_Institution
A. F. Ioffe Physico-Technical Institute of the USSR Academy of Sciences, Leningrad, USSR
Volume
21
fYear
1975
fDate
1975
Firstpage
375
Lastpage
378
Abstract
Plasma in the turn-on pnpn-structur could be contracted into a narrow filament by the turn-off base current, and this filament could be moved over the area of pnpn-structure. This effect was used for moving the plasma filament along a linear structure consisting of a number of pnpn-elements with a common emitter and a thick base. In the structure-"pulse distributor"-the turn-off base current pulses applied between the common base-common emitter contacts permit the plasma filament to be moved from element to element.
Keywords
Anodes; Charge carrier processes; Current density; Electron mobility; Nuclear and plasma sciences; Plasma devices; Radiation detectors; Semiconductor devices; Thyristors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1975 International
Type
conf
DOI
10.1109/IEDM.1975.188902
Filename
1478263
Link To Document