Title :
Gate-current-controlled plasma-coupled linear pnpn-devices
Author :
Grekhov, I.V. ; Linitchuk, I.A. ; Shulekin, A.E. ; Tuchkevich, V.K.
Author_Institution :
A. F. Ioffe Physico-Technical Institute of the USSR Academy of Sciences, Leningrad, USSR
Abstract :
Plasma in the turn-on pnpn-structur could be contracted into a narrow filament by the turn-off base current, and this filament could be moved over the area of pnpn-structure. This effect was used for moving the plasma filament along a linear structure consisting of a number of pnpn-elements with a common emitter and a thick base. In the structure-"pulse distributor"-the turn-off base current pulses applied between the common base-common emitter contacts permit the plasma filament to be moved from element to element.
Keywords :
Anodes; Charge carrier processes; Current density; Electron mobility; Nuclear and plasma sciences; Plasma devices; Radiation detectors; Semiconductor devices; Thyristors; Voltage;
Conference_Titel :
Electron Devices Meeting, 1975 International
DOI :
10.1109/IEDM.1975.188902