• DocumentCode
    3554037
  • Title

    Laser coding of bipolar read-only memories

  • Author

    North, J.C. ; Weick, W.W.

  • Author_Institution
    Bell Laboratories, Murray Hill, New Jersey
  • Volume
    21
  • fYear
    1975
  • fDate
    1975
  • Firstpage
    441
  • Lastpage
    444
  • Abstract
    The application of a pulsed YAG laser beam to coding high-speed bipolar silicon integrated circuit read-only memories is discussed. Coding is accomplished by the selective vaporization of Ti-Pt links connecting the contact pads of each memory cell to Ti-Pt-Au bit lines. Vaporized link resistances of >109ohms can be consistently obtained, with no melting of the adjacent gold patterns. Parameters that have been found to be relevant to the link vaporization process are described including the number of laser pulses per link, beam spot size, thickness of the gold metallization, and pulse energy.
  • Keywords
    Application specific integrated circuits; Bipolar integrated circuits; Gold; High speed integrated circuits; Joining processes; Laser beams; Optical pulses; Pulse circuits; Pulsed laser deposition; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1975 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1975.188918
  • Filename
    1478279
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3554037