DocumentCode
3554043
Title
Fabrication of a ferroelectric gate memory transistor
Author
Park, J.K. ; Grannemann, W.W.
Author_Institution
University of New Mexico, Albuquerque, New Mexico
Volume
21
fYear
1975
fDate
1975
Firstpage
463
Lastpage
465
Abstract
Transistors were fabricated using a sputtered barium titanate dielectric for the gate insulator. The insulator shows two polarization states. It is possible to have normal field effect transistor characteristics in one state and the transistor turned off in the other state. These transistors may be useful in memory applications.
Keywords
Atmosphere; Barium; Capacitance; Dielectrics and electrical insulation; FETs; Fabrication; Ferroelectric materials; Polarization; Silicon; Titanium compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1975 International
Type
conf
DOI
10.1109/IEDM.1975.188923
Filename
1478284
Link To Document