DocumentCode
3554065
Title
Complementary DMOS process for LSI
Author
Masuhara, Toshiaki ; Muller, R.S. ; Muller, Richard S.
Author_Institution
Hitachi Central Research Laboratory, Tokyo, Japan
Volume
21
fYear
1975
fDate
1975
Firstpage
543
Lastpage
546
Abstract
Through the application of diffused MOS (DMOS) transistors to the design of complementary MOS circuits, a CMOS process that is simpler and denser than that presently used has been designed and demonstrated. Test circuits using 1 ohm. cm n-type
Keywords
Boron; CMOS technology; Circuit testing; Doping; Electronic equipment testing; Inverters; Laboratories; Large scale integration; Silicon; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1975 International
Type
conf
DOI
10.1109/IEDM.1975.188943
Filename
1478304
Link To Document