Functional modelling of non-volatile MOS memory devices for computer-aided design

A simple model of non-volatile MOS memory (NVM) devices with dual dielectric layers is presented. Conduction through the dielectric layers is described by a dielectric resistivity ρ. Empirical relations for ρ are approximated by simple exponential dependences on electric field, E, for the dielectric materials of interest (SiO2, Si3N4, Al2O3) This procedure leads to further simplifications for threshold voltage shifts during write/erase operations, without introducing any adjustable parameters. Agreement with experimental data is favorable. A wide variety of NVM structures can be modelled, simply by varying two technology parameters, β1and β2. This model is well-suited to facilitate computer-aided-design (CAD) of NVM devices and circuits.