DocumentCode :
3554081
Title :
Cd-diffused Pb1-x Snx Te lasers with high output power
Author :
Lo, Wayne
Author_Institution :
Research Laboratories, General Motors Corporation, Warren, MI
Volume :
21
fYear :
1975
fDate :
1975
Firstpage :
604
Lastpage :
606
Abstract :
Cd-diffused Pb1-x Snx Te diode lasers have been fabricated with cw output powers of 1.25 mW (single-mode) and 2.4 mW (total) at 10.6 µm. These power levels are attributed to: the low-temperature Cd-diffusion, a new method of growing low dislocation density crystals and to contact resistance as low as 
-cm2. For the first time in Pb1-x Snx Te homojunction lasers the onset of lasing was observed in diode I-V measurements. Multi-mode emission spectra are common for cw operation, but reducing the cavity width encourages single-mode emission, indicating the filamentary nature of modes in these devices.
-cm2. For the first time in PbKeywords :
Contact resistance; Crystals; Diode lasers; Electrical resistance measurement; Grain boundaries; Laboratories; Laser modes; Microscopy; Power generation; Power lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1975 International
Type :
conf
DOI :
10.1109/IEDM.1975.188958
Filename :
1478319
Link To Document :
